收藏本站
A DVANCED
L INEAR
D EVICES, I NC.
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103
GENERAL DESCRIPTION
APPLICATIONS
The ALD1103 is a monolithic dual N-channel and dual P-channel matched
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of an
ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET
pair in one package.
The ALD1103 offers high input impedance and negative current temperature
coefficient. The transistor pair is matched for minimum offset voltage and
differential thermal response, and it is designed for precision signal
switching and amplifying applications in +2V to +12V systems where low
?
?
?
?
?
?
?
?
?
?
Precision current mirrors
Complementary push-pull linear drives
Analog switches
Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
Precision matched current sources
input bias current, low input capacitance and fast switching speed are
desired. Since these are MOSFET devices, they feature very large (almost
PIN CONFIGURATION
infinite) current gain in a low frequency, or near DC, operating environment.
When used in pairs, a dual CMOS analog switch can be constructed. In
addition, the ALD1103 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
DN1
GN1
SN1
1
2
3
14
13
12
DN2
GN2
SN2
The ALD1103 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
V -
4
11
V +
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25 ° C is = 5mA/50pA = 100,000,000.
DP1
GP1
SP1
5
6
7
10
9
8
DP2
GP2
SP2
FEATURES
? Thermal tracking between N-channel and P-channel pairs
? Low threshold voltage of 0.7V for both N-channel &
P-channel MOSFETS
? Low input capacitance
? Low Vos -- 10mV
? High input impedance -- 10 13 ? typical
TOP VIEW
SBL, PBL, DB PACKAGES
BLOCK DIAGRAM
N GATE 1 (2)
? Low input and output leakage currents
? Negative current (I DS ) temperature coefficient
? Enhancement mode (normally off)
? DC current gain 10 9
? Matched N-channel and matched P-channel in one package
N DRAIN 1 (1)
N DRAIN 2 (14)
N SOURCE 1 (3)
SUBSTRATE (4)
N SOURCE 2 (12)
? RoHS compliant
N GATE 2 (13)
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
P GATE 1 (6)
0 ° C to +70 ° C
14-Pin
Small Outline
Package (SOIC)
ALD1103SBL
0 ° C to +70 ° C
14-Pin
Plastic Dip
Package
ALD1103PBL
-55 ° C to +125 ° C
14-Pin
CERDIP
Package
ALD1103DB
P DRAIN 1 (5)
P DRAIN 2 (10)
P SOURCE 1 (7)
SUBSTRATE (11)
P SOURCE 2 (8)
* Contact factory for leaded (non-RoHS) or high temperature versions.
P GATE 2 (9)
Rev 2.0 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ALD1105PBL MOSFET 2N+2P 13.2V 14PDIP
ALD1106SBL MOSFET 4N-CH 13.2V QUAD 14SOIC
ALD1107SBL MOSFET 4P-CH 13.2V QUAD 14SOIC
ALD110800ASCL MOSFET N-CH 10.6V QUAD 16SOIC
ALD110802PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110804PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110808PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110814PCL MOSFET N-CH 10.6V QUAD 16PDIP
相关代理商/技术参数
ALD1103SB 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1103SBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105_12 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105DB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105SB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET